Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO3

Abstract Ferroelectricity can reduce the subthreshold swing ( SS ) of metal-oxide-semiconductor field-effect transistors (MOSFETs) to below room-temperature Boltzmann limit ~60 mV/dec and provides an important strategy achieve a steeper . Surprisingly, by carefully tuning polarization switching dynamics BiFeO 3 ferroelectric capacitors commercial power MOSFET even be tuned zero or negative value, i.e., drain current increases with constant decreasing gate voltage. In particular, in addition positive lower than 60 mV/dec, established spanning for over seven orders magnitude. These intriguing phenomena are explained dynamics, which change charge redistributions accordingly affect voltage drops across capacitor MOSFET. This study deep insights into understanding steep MOSFETs, could promising designing advanced MOSFETs ultralow tunable